John D. Cressler

Professor
School of Electrical and Computer Engineering
777 Atlantic Drive N.W.
404.894.5161
The basic thrust of Professor Cressler's research is in the understanding, optimization, and utilization of silicon-based heterostructure devices, circuits, and systems for next-generation, performance-constrained, communications applications within the global electronics infrastructure. He and his team attempt to break the business-as-usual mold in this field and reimagine the way electronics in the 21st century can and should be practiced. To do this, his team specializes in emerging mixed-signal (i.e., RF, microwave, mm-wave, analog, and digital) integrated circuit technologies utilizing atomic-scale bandgap engineering with silicon-germanium (SiGe) alloys. His research focus is heavily on SiGe heterojunction bipolar transistor (HBT) technology, a silicon foundry compatible integrated circuit technology possessing unprecedented levels of performance (greater than 500 GHz peak frequency response in 2013), enabling a host of potentially paradigm-shifting applications in the realms of wired and wireless communications, radar systems, imaging/sensor technologies, and a broad spectrum of possibilities in so-called “extreme environments.”